FZT655TC
TRANS NPN 150V 1A SOT223-3Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated FZT655TC is a high-performance NPN bipolar junction transistor designed for demanding applications. This surface mount device, packaged in a SOT-223-3 (TO-261-4, TO-261AA), offers a collector-emitter breakdown voltage of 150V and a continuous collector current capability of 1A. With a maximum power dissipation of 2W and a transition frequency of 30MHz, the FZT655TC is suitable for power switching and amplification circuits. Key parameters include a minimum DC current gain (hFE) of 50 at 500mA and 5V, and a Vce saturation of 500mV at 200mA and 1A. The operating temperature range is -55°C to 150°C. This component finds application in power management, industrial control, and telecommunications equipment. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 500mA, 5V |
| Frequency - Transition | 30MHz |
| Supplier Device Package | SOT-223-3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 2 W |
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