FZT591TC
TRANS PNP 60V 1A SOT223-3Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated FZT591TC is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This device features a Collector-Emitter Breakdown Voltage (Vceo) of 60V and a continuous Collector Current (Ic) of up to 1A. The FZT591TC offers a minimum DC current gain (hFE) of 100 at 500mA and 5V, with a transition frequency (fT) of 150MHz. It is specified with a maximum power dissipation of 2W and a low Collector-Emitter Saturation Voltage (Vce(sat)) of 600mV at 100mA collector current and 100mA base current. The transistor is housed in a SOT-223-3 surface-mount package, suitable for automated assembly processes. Operating temperature range is from -55°C to 150°C. This component finds application in various electronic systems including consumer electronics, industrial automation, and power management circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 500mA, 5V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | SOT-223-3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 2 W |
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