FZT591ATC
TRANS PNP 40V 1A SOT223-3Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated FZT591ATC is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component offers a collector-emitter breakdown voltage of 40V and a continuous collector current capability of 1A. It features a maximum power dissipation of 2W and a transition frequency of 150MHz. The device exhibits a minimum DC current gain (hFE) of 300 at 100mA and 5V. The saturation voltage (Vce Sat) is a maximum of 500mV at 1A collector current with 100mA base current. The FZT591ATC is housed in a SOT-223-3 surface-mount package and operates across a temperature range of -55°C to 150°C. This device is commonly found in consumer electronics, industrial control systems, and power management circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 100mA, 5V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | SOT-223-3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 2 W |
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