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FZT558TC

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FZT558TC

TRANS PNP 400V 0.2A SOT223-3

Manufacturer: Diodes Incorporated

Categories: Single Bipolar Transistors

Quality Control: Learn More

The Diodes Incorporated FZT558TC is a PNP bipolar junction transistor designed for high voltage applications. This device offers a collector-emitter breakdown voltage (Vce(max)) of 400V and a continuous collector current (Ic(max)) of 200mA. Featuring a transition frequency (fT) of 50MHz, it is suitable for general-purpose amplification and switching in industrial, consumer electronics, and telecommunications equipment. The transistor exhibits a maximum power dissipation of 2W and a low collector cutoff current (Icbo) of 100nA. Its DC current gain (hFE) is a minimum of 100 at 50mA and 10V. The FZT558TC is housed in a SOT-223-3 surface mount package and operates within an ambient temperature range of -55°C to 150°C. The Vce(sat) is specified at 500mV with a base current of 6mA and collector current of 50mA. This component is supplied on a tape and reel for automated assembly.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 9 week(s)Product Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 6mA, 50mA
Current - Collector Cutoff (Max)100nA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 50mA, 10V
Frequency - Transition50MHz
Supplier Device PackageSOT-223-3
Current - Collector (Ic) (Max)200 mA
Voltage - Collector Emitter Breakdown (Max)400 V
Power - Max2 W

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