FZT558
TRANS PNP 400V 0.2A SOT223-3Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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The Diodes Incorporated FZT558 is a PNP bipolar junction transistor featuring a 400V collector-emitter breakdown voltage and a maximum continuous collector current of 200mA. This device offers a transition frequency of 50MHz and a power dissipation of 2W. It is supplied in a SOT-223-3 surface mount package, also known as TO-261-4 or TO-261AA. The minimum DC current gain (hFE) is 100 at 50mA and 10V. Key electrical characteristics include a collector cutoff current of 100nA and a Vce saturation of 500mV at 6mA base current and 50mA collector current. The operating temperature range is -55°C to 150°C. This component is suitable for applications in industrial and consumer electronics where high voltage switching and amplification are required. The FZT558 is available on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 6mA, 50mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 50mA, 10V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | SOT-223-3 |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
| Power - Max | 2 W |
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