FMMT620TC
TRANS NPN 80V 1.5A SOT23-3Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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The Diodes Incorporated FMMT620TC is an NPN bipolar junction transistor (BJT) designed for efficient switching and amplification applications. This surface mount device, housed in a SOT-23-3 package, offers a collector-emitter breakdown voltage of 80V and a continuous collector current capability of 1.5A. It features a transition frequency of 160MHz and a maximum power dissipation of 625mW. Key electrical characteristics include a low Vce(sat) of 200mV at 50mA/1.5A and a high DC current gain (hFE) of 300 minimum at 200mA/2V. The device operates within a temperature range of -55°C to 150°C. This component is commonly utilized in consumer electronics, industrial control systems, and power management circuits. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 50mA, 1.5A |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 200mA, 2V |
| Frequency - Transition | 160MHz |
| Supplier Device Package | SOT-23-3 |
| Current - Collector (Ic) (Max) | 1.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 625 mW |
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