FMMT493AW
TRANS NPN 100V 1A SOT23Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated FMMT493AW is an NPN bipolar junction transistor designed for demanding electronic applications. This component offers a robust 100V collector-emitter breakdown voltage and a continuous collector current capability of 1A, making it suitable for power switching and amplification tasks. With a transition frequency of 150MHz and a maximum power dissipation of 500mW, it performs effectively in various signal processing and control circuits. The DC current gain (hFE) is a minimum of 100 at 250mA and 10V, ensuring consistent performance. The specified Vce(sat) is a maximum of 600mV at 100mA and 1A for efficient operation. Packaged in a compact SOT-23 (Type DN) for surface mounting, this transistor finds utility in automotive, industrial control, and consumer electronics sectors. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 250mA, 10V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | SOT-23 (Type DN) |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 500 mW |
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