FMMT458W
TRANS NPN 400V 0.225A SOT23-3Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated FMMT458W is an NPN bipolar junction transistor (BJT) designed for surface mount applications. This device features a high collector-emitter breakdown voltage of 400V and a continuous collector current capability of 225mA. The FMMT458W exhibits a minimum DC current gain (hFE) of 100 at 50mA collector current and 10V collector-emitter voltage, with a transition frequency of 50MHz. Power dissipation is rated at 500mW, and it operates within a temperature range of -55°C to 150°C. The package is SOT-23-3 (TO-236-3, SC-59). This transistor is suitable for use in power switching and general-purpose amplification circuits across various industrial and consumer electronics applications. Saturation voltage is a maximum of 500mV at 6mA base current and 50mA collector current. Collector cutoff current is a maximum of 100nA.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 6mA, 50mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 50mA, 10V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | SOT-23-3 |
| Current - Collector (Ic) (Max) | 225 mA |
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
| Power - Max | 500 mW |