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FMMT416TD

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FMMT416TD

TRANS NPN 100V 0.5A SOT23

Manufacturer: Diodes Incorporated

Categories: Single Bipolar Transistors

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Diodes Incorporated FMMT416TD is an NPN bipolar junction transistor designed for avalanche mode operation. This surface mount device, packaged in a SOT-23-3 (TO-236-3, SC-59), offers a collector-emitter breakdown voltage of 100V and a continuous collector current capability of 500mA. With a transition frequency of 40MHz and a maximum power dissipation of 500mW, it is suitable for general-purpose amplification and switching applications. The DC current gain (hFE) is rated at a minimum of 100 at 10mA collector current and 10V Vce. Key parameters include a saturation voltage (Vce(sat)) of 100mV at 1mA base current and 10mA collector current, and a collector cutoff current (ICBO) of 100nA. This component operates within an extended temperature range of -55°C to 150°C. The FMMT416TD is commonly employed in industrial, automotive, and consumer electronics for signal conditioning and power management. It is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Transistor TypeNPN - Avalanche Mode
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic100mV @ 1mA, 10mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA, 10V
Frequency - Transition40MHz
Supplier Device PackageSOT-23-3
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)100 V
Power - Max500 mW

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