FMMT416TA
AVALANCHE TRANSISTOR SOT23 T&R 3Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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The Diodes Incorporated FMMT416TA is an NPN bipolar junction transistor featuring avalanche breakdown characteristics. This device is rated for a collector-emitter breakdown voltage of 100V and a continuous collector current of 500mA. It exhibits a transition frequency of 40MHz and a maximum power dissipation of 500mW. The FMMT416TA is supplied in a SOT-23 (Type DN) surface mount package, delivered on tape and reel. Key parameters include a minimum DC current gain (hFE) of 100 at 10mA and 10V, and a Vce(sat) of 100mV at 1mA collector current and 1mA base current. This component is utilized in general-purpose amplification and switching applications, with typical deployments in industrial and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Avalanche Mode |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 10V |
| Frequency - Transition | 40MHz |
| Supplier Device Package | SOT-23 (Type DN) |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 500 mW |
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