FMMT415TA
TRANS NPN 100V 0.5A SOT23-3Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated FMMT415TA is a high-voltage NPN bipolar junction transistor designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 100V and a continuous collector current rating of 500mA. With a transition frequency of 40MHz, it is suitable for moderate-speed operations. The device is packaged in a compact SOT-23-3 surface-mount format, enabling efficient board space utilization. Key parameters include a maximum power dissipation of 330mW and a Vce(sat) of 500mV at 1mA/10mA. Its avalanche mode operation provides enhanced reliability. Applications span industrial automation, consumer electronics, and telecommunications equipment. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Avalanche Mode |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 10mA, 10V |
| Frequency - Transition | 40MHz |
| Supplier Device Package | SOT-23-3 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 330 mW |