FMMT411FDBW-7
SS BIPOLAR TRANSISTORS W-DFN2020Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated NPN Bipolar Transistor, FMMT411FDBW-7. This device features an avalanche mode for enhanced reliability, operating with a collector-emitter breakdown voltage of 15V and a maximum collector current of 5A. The 110MHz transition frequency and 1.7W maximum power dissipation make it suitable for applications demanding efficient switching. Key parameters include a minimum DC current gain (hFE) of 100 at 10mA/10V and a low Vce(sat) of 100mV at 1mA/10mA. The component is supplied in a W-DFN2020-3 (Type A) surface mount package, presented on tape and reel. Its robust design and performance characteristics lend themselves to use in power management, consumer electronics, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Avalanche Mode |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 10V |
| Frequency - Transition | 110MHz |
| Supplier Device Package | W-DFN2020-3 (Type A) |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 15 V |
| Power - Max | 1.7 W |
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