DZT955-13
TRANS PNP 140V 4A SOT223-3Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated PNP Bipolar Junction Transistor, DZT955-13. This device features a 140V collector-emitter breakdown voltage and a continuous collector current capability of 4A. With a power dissipation of 1W, it operates efficiently across a junction temperature range of -55°C to 150°C. The transition frequency is specified at 150MHz. Key parameters include a minimum DC current gain (hFE) of 100 at 1A and 5V, and a collector-emitter saturation voltage (Vce(sat)) of 370mV at 300mA and 3A. The transistor is housed in a SOT-223-3 surface mount package, supplied on tape and reel. This component is suitable for applications in power switching and general-purpose amplification within industrial and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 370mV @ 300mA, 3A |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1A, 5V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | SOT-223-3 |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 140 V |
| Power - Max | 1 W |
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