DZT851-13
TRANS NPN 60V 6A SOT223-3Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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The Diodes Incorporated DZT851-13 is a high-performance NPN bipolar junction transistor designed for demanding applications. This component offers a robust 60V collector-emitter breakdown voltage and a continuous collector current capability of up to 6A. Characterized by a transition frequency of 130MHz and a maximum power dissipation of 1W, it ensures efficient operation in various circuits. The device exhibits a minimum DC current gain (hFE) of 100 at 2A and 1V, with a saturation voltage (Vce(sat)) of 375mV at 300mA and 6A. The DZT851-13 is supplied in a SOT-223-3 surface mount package, facilitating integration into compact designs. Its operating temperature range spans from -55°C to 150°C. This transistor finds utility in power management, automotive electronics, and general-purpose switching applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 375mV @ 300mA, 6A |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 2A, 1V |
| Frequency - Transition | 130MHz |
| Supplier Device Package | SOT-223-3 |
| Current - Collector (Ic) (Max) | 6 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 1 W |
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