DZT751-13
TRANS PNP 60V 3A SOT223-3Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated DZT751-13 is a PNP bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. This component features a 60V collector-emitter breakdown voltage (Vceo) and a continuous collector current (Ic) capability of up to 3A. The transistor exhibits a minimum DC current gain (hFE) of 100 at 500mA collector current and 2V Vce. Its transition frequency (fT) is rated at 145MHz, making it suitable for moderate frequency operations. Dissipating a maximum power of 1W, the DZT751-13 is housed in a SOT-223-3 surface-mount package, also known as TO-261-4. The device operates within an industrial temperature range of -55°C to 150°C. This transistor finds application in areas such as power management, consumer electronics, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 300mA, 3A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 500mA, 2V |
| Frequency - Transition | 145MHz |
| Supplier Device Package | SOT-223-3 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 1 W |
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