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DZT658-13

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DZT658-13

TRANS NPN 400V 0.5A SOT223-3

Manufacturer: Diodes Incorporated

Categories: Single Bipolar Transistors

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Diodes Incorporated NPN Bipolar Junction Transistor, part number DZT658-13, offers a 400V collector-emitter breakdown voltage and a continuous collector current of 500mA. This device, packaged in a SOT-223-3 (TO-261-4, TO-261AA) surface mount case, features a transition frequency of 50MHz and a maximum power dissipation of 1W. Key parameters include a minimum DC current gain (hFE) of 40 at 200mA and 10V, and a Vce saturation of 500mV maximum at 10mA base current and 100mA collector current. The operating temperature range is -55°C to 150°C. Applications for this component include power switching and general-purpose amplification circuits within industrial and consumer electronics sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 10mA, 100mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 200mA, 10V
Frequency - Transition50MHz
Supplier Device PackageSOT-223-3
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)400 V
Power - Max1 W

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