DZT651-13
TRANS NPN 60V 3A SOT223-3Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated's DZT651-13 is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This surface-mount component, housed in a SOT-223-3 package, offers a collector-emitter breakdown voltage of 60V and a continuous collector current capability of up to 3A. Its DC current gain (hFE) is a minimum of 100 at 500mA and 2V, with a transition frequency of 200MHz. The maximum power dissipation is rated at 1W. The DZT651-13 is suitable for use in consumer electronics, industrial control systems, and power management circuits. It features a collector cutoff current of 100nA at its maximum rating and a Vce saturation of 600mV at 300mA collector current. The operating temperature range is -55°C to 150°C. The component is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 300mA, 3A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 500mA, 2V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | SOT-223-3 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 1 W |