DXTN07060BFG-7
TRANS NPN 60V 3A POWERDI3Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated NPN Bipolar Transistor, part number DXTN07060BFG-7. This device features a 60V collector-emitter breakdown voltage and a maximum collector current of 3A. With a transition frequency of 175MHz and a power dissipation of 900mW, it is suitable for applications requiring efficient switching. The minimum DC current gain (hFE) is 100 at 500mA and 2V. The saturation voltage (Vce(sat)) is a maximum of 500mV at 300mA and 3A. This component is housed in an 8-PowerVDFN package with wettable flank technology for enhanced solder joint reliability, mounted on the surface. Operating temperature range is -55°C to 175°C. This transistor is commonly utilized in power management, automotive, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount, Wettable Flank |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 300mA, 3A |
| Current - Collector Cutoff (Max) | 20nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 500mA, 2V |
| Frequency - Transition | 175MHz |
| Supplier Device Package | PowerDI3333-8 (SWP) Type UX |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 900 mW |
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