DXTN03100CFG-7
PWR MID PERF TRANSISTOR POWERDI3Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated NPN bipolar transistor, part number DXTN03100CFG-7. This device offers a 100V collector-emitter breakdown voltage and a continuous collector current of 5A. Featuring a transition frequency of 140MHz, it is designed for efficient operation with a maximum power dissipation of 1.2W. The transistor exhibits a minimum DC current gain (hFE) of 200 at 1A, 2V, and a Vce saturation of 220mV at 500mA, 5A. It is supplied in a wettable flank PowerDI3333-8 (SWP) Type UX surface mount package, facilitating automated assembly and improved solder joint reliability. Operating temperature range is -55°C to 150°C. This component is suitable for high-performance power switching applications in automotive and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount, Wettable Flank |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 220mV @ 500mA, 5A |
| Current - Collector Cutoff (Max) | 20nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 1A, 2V |
| Frequency - Transition | 140MHz |
| Supplier Device Package | PowerDI3333-8 (SWP) Type UX |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1.2 W |
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