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DXTN03060BFG-7

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DXTN03060BFG-7

PWR MID PERF TRANSISTOR POWERDI3

Manufacturer: Diodes Incorporated

Categories: Single Bipolar Transistors

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Diodes Incorporated NPN Bipolar Transistor, part number DXTN03060BFG-7. This device features a 60V collector-emitter breakdown voltage and a maximum collector current of 6A. With a transition frequency of 140MHz and a power dissipation of 1.2W, it is suitable for demanding applications. The minimum DC current gain (hFE) is 100 at 2A, 2V, and the saturation voltage (Vce(sat)) is a maximum of 260mV at 300mA, 6A. It exhibits a low collector cutoff current of 100nA (max). The DXTN03060BFG-7 is housed in an 8-PowerVDFN package with Wettable Flank technology, facilitating automated optical inspection. Operating temperature ranges from -55°C to 150°C. This component is commonly found in power management and general-purpose switching applications across various industrial sectors. Supplied on tape and reel.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount, Wettable Flank
Transistor TypeNPN
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic260mV @ 300mA, 6A
Current - Collector Cutoff (Max)100nA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 2A, 2V
Frequency - Transition140MHz
Supplier Device PackagePowerDI3333-8 (SWP) Type UX
Current - Collector (Ic) (Max)6 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max1.2 W

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