DSM80101M-7
TRANS NPN 80V 0.5A SOT26Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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The Diodes Incorporated DSM80101M-7 is an NPN bipolar junction transistor featuring an isolated internal diode. This component is housed in a SOT-26 package, facilitating efficient surface mounting. It offers a maximum collector-emitter breakdown voltage of 80V and can handle a continuous collector current of up to 500mA. The transistor exhibits a minimum DC current gain (hFE) of 120 at 10mA collector current and 1V collector-emitter voltage. Its collector cutoff current (ICBO) is a maximum of 100nA. The saturation voltage (Vce Sat) is specified at a maximum of 300mV with a base current of 10mA and a collector current of 100mA. The device has a maximum power dissipation of 600mW and operates within an extended temperature range of -65°C to 150°C. This component is commonly utilized in power management and general-purpose switching applications across various industrial sectors. The part is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN + Diode (Isolated) |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 10mA, 1V |
| Frequency - Transition | - |
| Supplier Device Package | SOT-26 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 600 mW |
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