DSM80100M-7
TRANS PNP 80V 0.5A SOT26Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated DSM80100M-7 is a PNP Bipolar Junction Transistor (BJT) with an isolated diode, designed for surface mount applications. This component offers a collector-emitter breakdown voltage of 80V and a maximum collector current of 500mA. The DC current gain (hFE) is a minimum of 120 at 10mA collector current and 1V collector-emitter voltage. It features a maximum saturation voltage of 250mV at 10mA base current and 100mA collector current. The device has a maximum power dissipation of 600mW and an operating temperature range of -65°C to 150°C. Provided in a SOT-26 package, it is supplied on tape and reel. This transistor finds application in power management and general-purpose switching circuits within industrial and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP + Diode (Isolated) |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 10mA, 1V |
| Frequency - Transition | - |
| Supplier Device Package | SOT-26 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 600 mW |
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