DRDN010W-7
TRANS NPN 18V 1A SOT363Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated DRDN010W-7 is a bipolar junction transistor (BJT) featuring an NPN configuration with an isolated diode. This surface mount component, housed in a SOT-363 package, offers an 18V collector-emitter breakdown voltage and a maximum collector current of 1A. With a transition frequency of 100MHz and a maximum power dissipation of 200mW, it is suitable for applications requiring moderate switching speeds and current handling. The DC current gain (hFE) is a minimum of 150 at 100mA and 1V. This component is commonly utilized in consumer electronics, industrial control systems, and automotive applications. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN + Diode (Isolated) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 30mA, 300mA |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 100mA, 1V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SOT-363 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 18 V |
| Power - Max | 200 mW |
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