DRDN005W-7
TRANS NPN 80V 0.5A SOT363Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated DRDN005W-7 is an NPN bipolar junction transistor with an isolated diode, packaged in a SOT-363 surface mount configuration. This device offers a collector-emitter breakdown voltage of 80V and a maximum continuous collector current of 500mA. Its transition frequency is 100MHz, with a maximum power dissipation of 200mW. The minimum DC current gain (hFE) is 100 at 100mA collector current and 1V collector-emitter voltage. Saturation voltage (Vce(sat)) is a maximum of 250mV at 10mA base current and 100mA collector current. The collector cutoff current (Icbo) is a maximum of 100nA. Operating temperature range is -55°C to 150°C. This component is suitable for applications in consumer electronics and industrial control systems. The DRDN005W-7 is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN + Diode (Isolated) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 1V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SOT-363 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 200 mW |
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