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DPLS4140E-13

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DPLS4140E-13

TRANS PNP 140V 4A SOT223-3

Manufacturer: Diodes Incorporated

Categories: Single Bipolar Transistors

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Diodes Incorporated DPLS4140E-13 is a PNP Bipolar Junction Transistor (BJT) designed for robust performance in demanding applications. This device features a collector-emitter breakdown voltage of 140V and a continuous collector current capability of 4A. With a maximum power dissipation of 1W and a transition frequency of 150MHz, it is well-suited for switching and amplification tasks. The transistor exhibits a minimum DC current gain (hFE) of 100 at 1A and 5V, with a Vce(sat) of 360mV at 300mA and 3A. The collector cutoff current (ICBO) is rated at a maximum of 20nA. Packaged in a SOT-223-3 (TO-261-4, TO-261AA) surface mount configuration, it is supplied on tape and reel. This component finds application in areas such as power management, motor control, and general-purpose switching within industrial and automotive sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic360mV @ 300mA, 3A
Current - Collector Cutoff (Max)20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1A, 5V
Frequency - Transition150MHz
Supplier Device PackageSOT-223-3
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)140 V
Power - Max1 W

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