DP0150ALP4-7
TRANS PNP 50V 0.1A 3DFNManufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated DP0150ALP4-7 is a PNP bipolar junction transistor (BJT) designed for surface-mount applications. This component features a 50V collector-emitter breakdown voltage and a maximum continuous collector current of 100mA. The transistor exhibits a minimum DC current gain (hFE) of 120 at 2mA and 6V, with a transition frequency of 80MHz. Its maximum power dissipation is 450mW. The DP0150ALP4-7 is housed in a compact X2-DFN1006-3 package, suitable for space-constrained designs. Applications for this type of device are found in consumer electronics, industrial control systems, and portable devices. The device operates within a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-XFDFN |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 2mA, 6V |
| Frequency - Transition | 80MHz |
| Supplier Device Package | X2-DFN1006-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 450 mW |
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