DNLS412E-13
TRANS NPN 12V 4A SOT-223Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated DNLS412E-13 is an NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. This component features a collector-emitter breakdown voltage of 12V and a continuous collector current capability of 4A, with a maximum power dissipation of 1W. The transition frequency is specified at 150MHz. The device is housed in a SOT-223-3 surface-mount package, also known as TO-261-4 or TO-261AA. Key electrical characteristics include a minimum DC current gain (hFE) of 500 at 100mA collector current and 2V collector-emitter voltage, and a saturation voltage (Vce(sat)) of 400mV at 50mA base current and 4A collector current. Operating temperature range is from -55°C to 150°C. This transistor is commonly utilized in power management, consumer electronics, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 50mA, 4A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 500 @ 100mA, 2V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | SOT-223-3 |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 12 V |
| Power - Max | 1 W |
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