DNLS160V-7
TRANS NPN 60V 1A SOT563Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated NPN Bipolar Junction Transistor, DNLS160V-7, is offered in a compact SOT-563 surface mount package. This device features a collector-emitter breakdown voltage of 60V and a maximum continuous collector current of 1A. With a transition frequency of 150MHz and a power dissipation of 300mW, it is suitable for general-purpose amplification and switching applications. The minimum DC current gain (hFE) is 250 at 1mA collector current and 5V Vce. Saturation voltage (Vce(sat)) is rated at a maximum of 250mV at 100mA Ic and 1A Ib. This component is commonly utilized in consumer electronics and industrial control systems. The DNLS160V-7 is supplied on tape and reel for automated assembly processes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 250 @ 1mA, 5V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | SOT-563 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 300 mW |