DNLS160-7
TRANS NPN 60V 1A SOT23-3Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated DNLS160-7 is an NPN Bipolar Junction Transistor (BJT) designed for surface mount applications. This device features a collector-emitter breakdown voltage of 60V and a continuous collector current capability of 1A. The DNLS160-7 offers a transition frequency of 270MHz and a maximum power dissipation of 300mW within its SOT-23-3 package. Key specifications include a minimum DC current gain (hFE) of 200 at 500mA and 5V, and a saturation voltage (Vce(sat)) of 250mV at 100mA and 1A. The operating temperature range is -55°C to 150°C. This component is commonly utilized in consumer electronics, industrial control systems, and automotive applications requiring efficient switching and amplification. The DNLS160-7 is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 500mA, 5V |
| Frequency - Transition | 270MHz |
| Supplier Device Package | SOT-23-3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 300 mW |