DN0150BLP4-7
TRANS NPN 50V 0.1A 3DFNManufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated DN0150BLP4-7 is an NPN bipolar junction transistor (BJT) designed for surface mount applications. This component offers a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. It features a transition frequency of 60MHz and a power dissipation of 450mW. The device exhibits a minimum DC current gain (hFE) of 200 at 2mA collector current and 6V collector-emitter voltage. Saturation voltage (Vce(sat)) is specified at a maximum of 250mV for a base current of 10mA and a collector current of 100mA. The collector cutoff current (ICBO) is a maximum of 100nA. The DN0150BLP4-7 is supplied in a 3-XFDFN package, specifically the X2-DFN1006-3, and is provided on tape and reel. This transistor is suitable for use in general-purpose amplification and switching applications across various electronic systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-XFDFN |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 6V |
| Frequency - Transition | 60MHz |
| Supplier Device Package | X2-DFN1006-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 450 mW |
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