DN0150ALP4-7B
TRANS NPN 50V 0.1A 3DFNManufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated NPN Bipolar Junction Transistor, part number DN0150ALP4-7B. This device features a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. The minimum DC current gain (hFE) is 120 at 2mA collector current and 6V collector-emitter voltage. The transition frequency is 60MHz, and it dissipates a maximum power of 450mW. The transistor type is NPN, and it is supplied in a 3-XFDFN package (X2-DFN1006-3) suitable for surface mounting. Saturation voltage (Vce(sat)) is a maximum of 250mV at 10mA base current and 100mA collector current. Cutoff current (ICBO) is a maximum of 100nA. This component is commonly utilized in industrial and consumer electronics applications. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-XFDFN |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 2mA, 6V |
| Frequency - Transition | 60MHz |
| Supplier Device Package | X2-DFN1006-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 450 mW |
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