DCX68-13
TRANS NPN 20V 1A SOT89-3Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated DCX68-13 is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This device offers a collector-emitter breakdown voltage (Vce(max)) of 20V and a continuous collector current (Ic) capability of up to 1A. The maximum power dissipation is rated at 1W. Key performance parameters include a transition frequency (fT) of 330MHz and a minimum DC current gain (hFE) of 85 at 500mA and 1V. The saturation voltage (Vce(sat)) is a maximum of 500mV at 100mA collector current and 10mA base current. The DCX68-13 features a low collector cutoff current (Icbo) of 100nA. This component is supplied in a SOT-89-3 package for surface mounting and is available on tape and reel. It is suitable for use in industrial and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 85 @ 500mA, 1V |
| Frequency - Transition | 330MHz |
| Supplier Device Package | SOT-89-3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 1 W |
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