DCX56-13
TRANS NPN 80V 1A SOT89-3Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated NPN Bipolar Junction Transistor, part number DCX56-13. This device offers a collector-emitter breakdown voltage of 80V and a continuous collector current of 1A. Featuring a transition frequency of 200MHz and a maximum power dissipation of 1W, it is supplied in a SOT-89-3 package. The DC current gain (hFE) is a minimum of 63 at 150mA and 2V. Saturation voltage is specified at 500mV maximum for an operating point of 50mA base current and 500mA collector current. Collector cutoff current is 100nA (ICBO). Operating temperature range is -55°C to 150°C. This component is suitable for applications in consumer electronics, industrial control, and automotive systems requiring reliable switching and amplification. Packaging is Tape & Reel (TR).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 63 @ 150mA, 2V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | SOT-89-3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1 W |
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