DCX55-16-13
TRANS NPN 60V 1A SOT89-3Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated DCX55-16-13 is an NPN bipolar junction transistor (BJT) designed for surface mount applications. This component features a collector-emitter breakdown voltage of 60V and a continuous collector current rating of 1A. The DC current gain (hFE) is specified at a minimum of 100 at 150mA collector current and 2V collector-emitter voltage. With a transition frequency of 200MHz and a maximum power dissipation of 1W, it is suitable for various general-purpose amplification and switching tasks. The device is packaged in a SOT-89-3 (TO-243AA) surface mount package, supplied on tape and reel. Typical applications include power management, consumer electronics, and industrial control systems. The collector cutoff current (ICBO) is a maximum of 100nA, and the Vce saturation voltage is 500mV at 50mA base current and 500mA collector current. Operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 2V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | SOT-89-3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 1 W |
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