DCX55-13
TRANS NPN 60V 1A SOT89-3Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated DCX55-13 is an NPN bipolar junction transistor (BJT) designed for surface mount applications. This component offers a collector-emitter breakdown voltage of 60V and a continuous collector current capability of 1A. It features a transition frequency of 200MHz and a maximum power dissipation of 1W. The DC current gain (hFE) is a minimum of 63 at 150mA and 2V, with a collector cutoff current of 100nA (ICBO). Saturation voltage (Vce Sat) is specified at a maximum of 500mV for 50mA base current and 500mA collector current. The DCX55-13 is provided in a SOT-89-3 package and operates within a temperature range of -55°C to 150°C. This device is suitable for use in various industrial and consumer electronics applications requiring efficient switching and amplification.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 63 @ 150mA, 2V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | SOT-89-3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 1 W |
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