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DCX53-13

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DCX53-13

TRANS PNP 80V 1A SOT89-3

Manufacturer: Diodes Incorporated

Categories: Single Bipolar Transistors

Quality Control: Learn More

Diodes Incorporated PNP Bipolar Junction Transistor, part number DCX53-13. This SOT-89-3 packaged device offers a 80V collector-emitter breakdown voltage and a maximum collector current of 1A. Key specifications include a minimum DC current gain (hFE) of 63 at 150mA and 2V, a transition frequency of 200MHz, and a maximum power dissipation of 1W. The transistor exhibits a Vce saturation of 500mV at 50mA and 500mA, with a collector cutoff current of 100nA (ICBO). Operating temperature range is from -55°C to 150°C. This component finds application in industrial and consumer electronics sectors. It is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-243AA
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce63 @ 150mA, 2V
Frequency - Transition200MHz
Supplier Device PackageSOT-89-3
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max1 W

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