DCP68-25-13
TRANS NPN 20V 1A SOT223-3Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated NPN Bipolar Junction Transistor (BJT), part number DCP68-25-13. This component offers a 20V collector-emitter breakdown voltage and a continuous collector current of 1A. With a transition frequency of 330MHz and a maximum power dissipation of 1W, it is suitable for applications requiring efficient switching and amplification. The minimum DC current gain (hFE) is 160 at 500mA and 1V. The device features a low collector cutoff current of 100nA (ICBO) and a Vce saturation of 500mV at 100mA and 1A. Packaged in a SOT-223-3 (TO-261-4, TO-261AA) surface mount configuration, this transistor is available on tape and reel. It is commonly utilized in consumer electronics and industrial control systems. Operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 500mA, 1V |
| Frequency - Transition | 330MHz |
| Supplier Device Package | SOT-223-3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 1 W |