DCP56-13
TRANS NPN 80V 1A SOT223-3Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated NPN Bipolar Junction Transistor (BJT), part number DCP56-13. This component features an 80V collector-emitter breakdown voltage and a maximum collector current of 1A. It offers a minimum DC current gain (hFE) of 40 at 150mA and 2V, with a transition frequency of 200MHz. The device is specified with a maximum power dissipation of 1W and a collector cutoff current of 100nA. Saturation voltage is a maximum of 500mV at 50mA base current and 500mA collector current. Packaged in a SOT-223-3 (TO-261-4, TO-261AA) surface mount configuration, it operates across a temperature range of -55°C to 150°C. This transistor is suitable for applications in consumer electronics, industrial automation, and power management. Supplied on Tape & Reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 2V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | SOT-223-3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1 W |
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