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DCP55-13

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DCP55-13

TRANS NPN 60V 1A SOT-223

Manufacturer: Diodes Incorporated

Categories: Single Bipolar Transistors

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Diodes Incorporated DCP55-13 is an NPN bipolar junction transistor (BJT) designed for surface mount applications. This component features a 60V collector-emitter breakdown voltage and a maximum continuous collector current of 1A. With a transition frequency of 200MHz, it is suitable for various signal amplification and switching tasks. The transistor offers a minimum DC current gain (hFE) of 40 at 150mA and 2V. Maximum power dissipation is rated at 1W. The DCP55-13 is housed in a SOT-223-3 package, also known as TO-261-4 or TO-261AA, and is supplied on tape and reel. Typical applications include general-purpose amplification and switching in consumer electronics and industrial control systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA, 2V
Frequency - Transition200MHz
Supplier Device PackageSOT-223-3
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max1 W

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