DCP54-16-13
TRANS NPN 45V 1A SOT223-3Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated NPN Bipolar Junction Transistor, part number DCP54-16-13, is designed for general-purpose amplification and switching applications. This device features a maximum collector current (Ic) of 1 A and a collector-emitter breakdown voltage (Vce(max)) of 45 V. With a transition frequency (fT) of 200 MHz and a maximum power dissipation of 1 W, it is suitable for demanding performance requirements. The specified DC current gain (hFE) is a minimum of 100 at 150 mA and 2 V. The transistor is housed in a SOT-223-3 surface mount package, facilitating automated assembly. Operating temperature ranges from -55°C to 150°C. This component finds application in consumer electronics, industrial control systems, and telecommunications equipment.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 2V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | SOT-223-3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 1 W |
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