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DCP53-16-13

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DCP53-16-13

TRANS PNP 80V 1A SOT223-3

Manufacturer: Diodes Incorporated

Categories: Single Bipolar Transistors

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Diodes Incorporated's DCP53-16-13 is a PNP bipolar junction transistor for surface mount applications. This component offers a collector-emitter breakdown voltage of 80V and a continuous collector current capability of up to 1A. It features a high transition frequency of 200MHz and a maximum power dissipation of 1W. The DC current gain (hFE) is specified at a minimum of 100 at 150mA and 2V. Saturation voltage (Vce Sat) is a maximum of 500mV at 50mA collector current driven by a 50mA base current. Leakage current (ICBO) is rated at a maximum of 100nA. The device is supplied in a SOT-223-3 package, also identified as TO-261-4 or TO-261AA, and is provided on tape and reel. Its operating temperature range is from -55°C to 150°C. This transistor is suitable for use in power management and general-purpose amplification circuits across various industrial and consumer electronics applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 2V
Frequency - Transition200MHz
Supplier Device PackageSOT-223-3
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max1 W

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