BC847BLP4-7
TRANS NPN 45V 0.1A 3DFNManufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated BC847BLP4-7 is an NPN bipolar junction transistor designed for general-purpose amplification and switching applications. This component offers a collector-emitter breakdown voltage of 45V and a continuous collector current capability of 100mA. It features a high DC current gain (hFE) of 200 minimum at 2mA collector current and 5V collector-emitter voltage, with a transition frequency of 100MHz. The maximum power dissipation is rated at 250mW. The BC847BLP4-7 is supplied in a compact X2-DFN1006-3 package, suitable for surface mounting. Its low saturation voltage, specified as 600mV maximum at 5mA base current and 100mA collector current, makes it efficient for switching tasks. Operating temperature range is from -55°C to 150°C. This device is commonly utilized in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-XFDFN |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | X2-DFN1006-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 250 mW |
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