APT27ZTR-G1
TRANS NPN 450V 0.8A TO92Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated APT27ZTR-G1 is an NPN bipolar junction transistor designed for through-hole mounting in a TO-92 package. This device offers a collector-emitter breakdown voltage of 450V and a continuous collector current capability of up to 800mA. The maximum power dissipation is rated at 800mW. Key electrical characteristics include a minimum DC current gain (hFE) of 15 at 100mA and 10V, and a saturation voltage (Vce Sat) of 500mV at 40mA base current and 200mA collector current. The collector cutoff current is a maximum of 10µA. This component operates within an ambient temperature range of -55°C to 150°C. The Diodes Incorporated APT27ZTR-G1 is commonly utilized in power supply circuits and general-purpose amplification applications across various industrial sectors. It is supplied in cut tape packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 40mA, 200mA |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 100mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-92 |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 450 V |
| Power - Max | 800 mW |
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