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APT27HZTR-G1

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APT27HZTR-G1

TRANS NPN 450V 0.8A TO92

Manufacturer: Diodes Incorporated

Categories: Single Bipolar Transistors

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The Diodes Incorporated APT27HZTR-G1 is an NPN bipolar junction transistor designed for power switching applications. This component offers a high collector-emitter breakdown voltage of 450V and a continuous collector current rating of 800mA, with a maximum power dissipation of 800mW. It features a low saturation voltage of 500mV at 200mA collector current with a 40mA base current. The DC current gain (hFE) is a minimum of 6 at 300mA collector current and 10V collector-emitter voltage. The transistor is housed in a TO-92 package and is supplied on a cut tape reel. This device is suitable for use in power supply circuits, lighting control, and general-purpose switching applications within the industrial and consumer electronics sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:
Technical Details:
PackagingCut Tape (CT)
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 40mA, 200mA
Current - Collector Cutoff (Max)10µA
DC Current Gain (hFE) (Min) @ Ic, Vce6 @ 300mA, 10V
Frequency - Transition-
Supplier Device PackageTO-92
Current - Collector (Ic) (Max)800 mA
Voltage - Collector Emitter Breakdown (Max)450 V
Power - Max800 mW

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