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2N5551

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2N5551

BJT TO92 160V NPN 0.625W 150C

Manufacturer: Diodes Incorporated

Categories: Single Bipolar Transistors

Quality Control: Learn More

Bipolar (BJT) Transistor NPN 160 V 200 mA 300MHz 625 mW Through Hole TO-92

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-
Vce Saturation (Max) @ Ib, Ic200mV @ 5mA, 50mA
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V
Frequency - Transition300MHz
Supplier Device PackageTO-92
Current - Collector (Ic) (Max)200 mA
Voltage - Collector Emitter Breakdown (Max)160 V
Power - Max625 mW

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