2DD2661-13
TRANS NPN 12V 2A SOT89-3Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated 2DD2661-13 is an NPN bipolar junction transistor designed for surface mount applications. This component features a collector current (Ic) capability of up to 2 A and a collector-emitter breakdown voltage (Vce(max)) of 12 V. With a transition frequency (fT) of 170 MHz and a maximum power dissipation of 900 mW, it is suitable for various signal amplification and switching tasks. The device exhibits a minimum DC current gain (hFE) of 270 at 200 mA and 2 V, and a saturation voltage (Vce(sat)) of 180 mV at 50 mA and 1 A. Packaged in a SOT-89-3 (TO-243AA) configuration and supplied on tape and reel, the 2DD2661-13 operates across a temperature range of -55°C to 150°C. This transistor finds application in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 180mV @ 50mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 270 @ 200mA, 2V |
| Frequency - Transition | 170MHz |
| Supplier Device Package | SOT-89-3 |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 12 V |
| Power - Max | 900 mW |
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