2DD2150R-13
TRANS NPN 20V 3A SOT89-3Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated 2DD2150R-13, a high-performance NPN Bipolar Junction Transistor (BJT), is engineered for demanding applications. This surface-mount device, packaged in a SOT-89-3 (TO-243AA), offers a 20V collector-emitter breakdown voltage and a maximum collector current of 3A. It features a transition frequency of 160MHz and a maximum power dissipation of 1W, making it suitable for power switching and amplification tasks. The device exhibits a minimum DC current gain (hFE) of 180 at 100mA and 2V, with a Vce saturation of 500mV at 100mA and 2A. Typical applications span industrial control, power management, and consumer electronics where reliable NPN transistor performance is critical. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 2A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 100mA, 2V |
| Frequency - Transition | 160MHz |
| Supplier Device Package | SOT-89-3 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 1 W |
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