2DD1766Q-13
TRANS NPN 32V 2A SOT89-3Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated NPN Bipolar Junction Transistor, part number 2DD1766Q-13. This device features a 32V collector-emitter breakdown voltage and a maximum collector current of 2A. With a transition frequency of 220MHz and a power dissipation of 1W, it is suitable for applications requiring efficient switching and amplification. The minimum DC current gain (hFE) is 120 at 500mA and 3V. Saturation voltage is specified at a maximum of 800mV at 200mA collector current and the corresponding base current. Packaged in a SOT-89-3 (TO-243AA) surface mount configuration, this component is supplied on tape and reel. It operates within a temperature range of -55°C to 150°C. Applications include power management, industrial controls, and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 800mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 500mA, 3V |
| Frequency - Transition | 220MHz |
| Supplier Device Package | SOT-89-3 |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 32 V |
| Power - Max | 1 W |
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