2DD1766P-13
TRANS NPN 32V 2A SOT89-3Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated 2DD1766P-13 is an NPN bipolar junction transistor (BJT) designed for surface mount applications. This component offers a collector-emitter breakdown voltage of 32 V and a continuous collector current capability of up to 2 A. It features a transition frequency of 220 MHz and a maximum power dissipation of 1 W. The DC current gain (hFE) is a minimum of 82 at 500 mA and 3 V, with a Vce saturation of 800 mV at 200 mA and 2 A. The collector cutoff current (ICBO) is specified at a maximum of 1 µA. Packaged in a SOT-89-3 (TO-243AA) format and supplied on tape and reel, this transistor is suitable for use in power management and general-purpose switching applications across various industrial sectors. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 800mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 82 @ 500mA, 3V |
| Frequency - Transition | 220MHz |
| Supplier Device Package | SOT-89-3 |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 32 V |
| Power - Max | 1 W |
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