2DB1714-13
TRANS PNP 30V 2A SOT89-3Manufacturer: Diodes Incorporated
Categories: Single Bipolar Transistors
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Diodes Incorporated 2DB1714-13 is a PNP bipolar junction transistor (BJT) designed for surface-mount applications. This component features a collector-emitter breakdown voltage of 30V and a maximum continuous collector current of 2A. With a transition frequency of 200MHz and a maximum power dissipation of 900mW, it is suitable for various switching and amplification tasks. The device offers a minimum DC current gain (hFE) of 270 at 200mA and 2V. The Vce(sat) is specified at 370mV maximum for an Ic of 1.5A and Ib of 75mA. Packaged in a SOT-89-3 (TO-243AA) and supplied on tape and reel, this transistor finds use in industrial and consumer electronics. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 370mV @ 75mA, 1.5A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 270 @ 200mA, 2V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | SOT-89-3 |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 900 mW |
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